AIGaN-Cladding-Free m-Plane InGaN/GaN Laser Diodes with p-Type AIGaN Etch Stop Layers

摘要

We present a new method of improving the accuracy and reproducibility of dry etching processes for ridge waveguide InGaN/GaN laser diodes (LDs). A GaN:Alo.o9Gao.9i N etch rate selectivity of 11 :1 was demonstrated for an m-plane LD with a 40 nm p-AI0.09Ga0.91 N etch stop layer (ESL) surrounded by Al-free cladding layers, establishing the effectiveness of AIGaN-based ESLs for controlling etch depth in ridge waveguide InGaN/ GaN LDs. These results demonstrate the potential for integrating AIGaN ESLs into commercial device designs where accurate control of the etch depth of the ridge waveguide is necessary for stable, kink-free operation at high output powers.