机译:基于GaN的宽带蓝色超发光发光二极管
Ecole Polytechnique Federate de Lausanne (EPFL), IPEQ, CH-1015 Lausanne, Switzerland;
Ecole Polytechnique Federate de Lausanne (EPFL), IPEQ, CH-1015 Lausanne, Switzerland;
Ecole Polytechnique Federate de Lausanne (EPFL), IPEQ, CH-1015 Lausanne, Switzerland;
Ecole Polytechnique Federate de Lausanne (EPFL), IPEQ, CH-1015 Lausanne, Switzerland;
Ecole Polytechnique Federate de Lausanne (EPFL), IPEQ, CH-1015 Lausanne, Switzerland;
Ecole Polytechnique Federate de Lausanne (EPFL), IPEQ, CH-1015 Lausanne, Switzerland;
EXALOS AG, Wagistrasse 21, CH-8952 Schlieren, Switzerland;
EXALOS AG, Wagistrasse 21, CH-8952 Schlieren, Switzerland;
EXALOS AG, Wagistrasse 21, CH-8952 Schlieren, Switzerland;
EXALOS AG, Wagistrasse 21, CH-8952 Schlieren, Switzerland;
EXALOS AG, Wagistrasse 21, CH-8952 Schlieren, Switzerland;
机译:内部电场对蓝GaN基超发光发光二极管光谱特性的影响
机译:宽带蓝InGaN / GaN超发光二极管的新理论模型
机译:哪些因素限制了GaN基超发光发光二极管(SLED)的效率?
机译:可见光范围内GaN基超发光发光二极管的最新进展
机译:GaN基发光二极管和垂直腔表面发射激光器的量子效率增强。
机译:基于单水平ZnO微棒/ GaN异质结的紫外/蓝色发光二极管
机译:使用非线性电压 - 温度关系精确确定GaN基蓝色发光二极管中的结温