机译:晶体缺陷与InGaN层的光致发光的相关性
Electrical and Computer Engineering, University of Delaware, Newark, Delaware 19716, USA;
Material Science and Engineering, University of Delaware, Newark, Delaware 19716, USA;
School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta,Georgia 30332, USA;
School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta,Georgia 30332, USA;
Material Science and Engineering, University of Delaware, Newark, Delaware 19716, USA;
School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta,Georgia 30332, USA;
Fulton School of Electrical Engineering, Arizona State University, Arizona 85287, USA;
机译:厚度小于或等于临界厚度的InGaN外延层的结构与光致发光特性之间的相关性
机译:使用空间分辨电致发光和光致发光研究了InGaN量子阱发光二极管的效率下降中的点缺陷,扩展缺陷和载流子局部的相互作用
机译:通过对InGaN底层进行应变控制的改性来改善其光致发光特性的InGaN量子阱
机译:含量高含铂层中结构性能和光致发光的比较研究
机译:InGaAs / GaAs多量子阱中的缺陷产生:晶体和光学特性与外延生长条件的相关性。
机译:大面状Si晶体纳米颗粒的高孔隙度层中的强红外光致发光
机译:使用光谱光致发光的微米级空间分辨率对晶体硅进行钝化层的厚度(Solar RRL 11/2017)
机译:非晶和结晶siO2中的本征缺陷光致发光