Ge-based interface passivation for atomic layer deposited La-doped ZrO_2 on III-V compound (GaAs,In_(0.15)Ga_(0.85)As) substrates

摘要

La-doped ZrO_2 thin films were grown by O_3-based atomic layer deposition on III-V (GaAs, In_(0.15)Ga_(0.85)As) substrates through direct growth and after intercalation of a Ge interface passivation layer. The interface composition was investigated by x-ray photoelectron spectroscopy, revealing a dramatic reduction of semiconductor-oxygen bonding upon Ge passivation. An improved electrical quality of the Ge-passivated interfaces due to the removal of Ga~(3+) bonding related traps is demonstrated by conductance measurements at various temperatures.