Characterization of a soluble anthradithiophene derivative

摘要

The structural and electrical properties of a solution processable material, 2,8-difluoro-5,11-tert-butyldimethylsilylethynyl anthradithiophene (TBDMS), were measured for single crystal transistors. TBDMS is observed to readily form single crystals from physical vapor zone sublimation. A columnar packing crystal structure, with an approximate π/4 radian rotational offset between neighboring molecules, is observed. Single crystal TBDMS transistors display a maximum observed saturation mobility μs of 0.07 cm~2/V s, current on-off ratio >10~7, and subthreshold swing 5≈1 dec/V. The spectral current noises of single crystal devices display a 1/f flicker noise, while the metal-semiconductor charge injection barrier is estimated by ultraviolet photoemission spectroscopy.