首页> 外文期刊>Applied Physicsletters >Analysis of a narrowband terahertz signal generated by a unitravelling carrier photodiode coupled with a dual-mode semiconductor Fabry-Perot laser
【24h】

Analysis of a narrowband terahertz signal generated by a unitravelling carrier photodiode coupled with a dual-mode semiconductor Fabry-Perot laser

机译:由单向载流光电二极管与双模半导体Fabry-Perot激光器耦合产生的窄带太赫兹信号的分析

获取原文
获取原文并翻译 | 示例

摘要

A narrowband terahertz signal generated by a unitravelling carrier photodiode (UTC-PD) interfaced with a dual-mode Fabry-Perot laser diode is demonstrated. A beat tone corresponding to the free spectral range is generated on the UTC-PD, and radiated by a transverse-electromagnetic-horn antenna. A terahertz signal at a frequency of 372 GHz, featuring a linewidth of 17 MHz is recorded by a subharmonic mixer coupled to an electrical spectrum analyzer. All components involved in this experiment operate at room temperature. The linewidth and the frequency of the emitted terahertz wave are analyzed, along with their dependency on dc-bias conditions applied to laser diode.
机译:演示了由双载子光电二极管(UTC-PD)与双模Fabry-Perot激光二极管接口的窄带太赫兹信号。在UTC-PD上生成与自由频谱范围相对应的拍音,并通过横向电磁喇叭天线辐射。通过耦合到电频谱分析仪的次谐波混频器记录频率为372 GHz的太赫兹信号,线宽为17 MHz。该实验涉及的所有组件均在室温下运行。分析了发射的太赫兹波的线宽和频率,以及它们对应用于激光二极管的直流偏置条件的依赖性。

著录项

  • 来源
    《Applied Physicsletters》 |2010年第24期|P.241106.1-241106.3|共3页
  • 作者单位

    Research Institute for Networks and Communications Engineering, Dublin City University, Glasnevin, Dublin 9, Ireland;

    rnResearch Institute for Networks and Communications Engineering, Dublin City University, Glasnevin, Dublin 9, Ireland;

    rnResearch Institute for Networks and Communications Engineering, Dublin City University, Glasnevin, Dublin 9, Ireland;

    rnResearch Institute for Networks and Communications Engineering, Dublin City University, Glasnevin, Dublin 9, Ireland;

    rnInstitut d'Electronique de Microelectronique et de Nanotechnologie (IEMN), UMR CNRS 8520 Universite de Lille 1, Avenue Poincare B.P. 60069, 59652 Villeneuve d'Ascq, France;

    rnInstitut d'Electronique de Microelectronique et de Nanotechnologie (IEMN), UMR CNRS 8520 Universite de Lille 1, Avenue Poincare B.P. 60069, 59652 Villeneuve d'Ascq, France;

    rnInstitut d'Electronique de Microelectronique et de Nanotechnologie (IEMN), UMR CNRS 8520 Universite de Lille 1, Avenue Poincare B.P. 60069, 59652 Villeneuve d'Ascq, France;

    rnInstitut d'Electronique de Microelectronique et de Nanotechnologie (IEMN), UMR CNRS 8520 Universite de Lille 1, Avenue Poincare B.P. 60069, 59652 Villeneuve d'Ascq, France;

    rnInstitut d'Electronique de Microelectronique et de Nanotechnologie (IEMN), UMR CNRS 8520 Universite de Lille 1, Avenue Poincare B.P. 60069, 59652 Villeneuve d'Ascq, France;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号