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机译:InSb和InAs纳米线场效应晶体管的温度相关特性
Division of Solid State Physics, Lund University, Box 118, S-22100 Lund, Sweden;
Division of Solid State Physics, Lund University, Box 118, S-22100 Lund, Sweden;
Division of Solid State Physics, Lund University, Box 118, S-22100 Lund, Sweden;
Division of Solid State Physics, Lund University, Box 118, S-22100 Lund, Sweden;
Division of Mathematical Physics, Lund University, Box 118, S-22100 Lund, Sweden;
rnDivision of Solid State Physics, Lund University, Box 118, S-22100 Lund, Sweden;
机译:InAs,InSb和GaSb N沟道纳米线金属氧化物半导体场效应晶体管在弹道输运极限中的性能比较
机译:$ n $型InSb和InAs纳米线场效应晶体管的性能
机译:高速,低功率InAs纳米线场效应晶体管的直径相关性能
机译:由InSb,Carbon和GaSb-InAs断裂间隙异质结构制成的隧穿场效应晶体管的性能比较
机译:InSb-InAs纳米线III型异质结的电学性质和能带图。
机译:基于InAs纳米线场效应晶体管的传输特性的传感响应
机译:INAS / INSB纳米型异质结构场效应晶体管的单极和双极操作