Correlating structural and resistive changes in Ti:NiO resistive memory elements

摘要

Structural and resistive changes in Ti-doped NiO resistive random access memory structures that occur upon electroforming have been investigated using hard x-ray microscopy. Electroforming leads to structural changes in regions of size up to about one micrometer, much larger than the grain size of the structure. Such changes are consistent with a migration of ionic species or defects during electroforming over regions containing many crystalline grains.