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机译:通过多孔低k / Cu互连中的Cu离子漂移观察空间电荷限制电流
Department of Materials Science and Engineering, The University of Texas at Arlington, Arlington, Texas 76019, USA;
Department of Materials Science and Engineering, The University of Texas at Arlington, Arlington, Texas 76019, USA;
Texas Instruments Inc., 13121 TI Boulevard, MS 366, Dallas, Texas 75243, USA;
GLOBALFOUNDRIES, 255 Fuller Rd., Albany, New York 12203, USA;
Logic Technology Development, Intel Corporation, Hillsboro, Oregon 97124, USA;
Department of Materials Science and Engineering, The University of Texas at Arlington, Arlington, Texas 76019, USA;
机译:Cu /多孔低k互连中电迁移的温度相关活化能
机译:用于先进的多孔低k和Cu互连应用的TiN金属硬掩模残留物去除配方开发
机译:抑制使用虚拟金属的铜/多孔低k互连的电迁移早期失效
机译:具有NH {Sub} 3等离子体处理和低k顶(LKT)介电结构的多孔低k / Cu互连的新型牛仔帽集成
机译:铜/多孔低k互连中多孔低k的泄漏电流行为和传导机理的研究:外在因素的影响。
机译:用于进一步缩小超大型集成器件-Cu互连的等离子增强化学气相沉积SiCH膜的低k覆盖层的材料设计
机译:Cu /多孔超低k互连技术中的介质/金属扩散屏障
机译:Cu / sub X / s / Cds太阳能电池中的空间电荷限制电流和电容