Temperature-dependent activation energy of electromigration in Cu/porous low-k interconnects

摘要

In this paper, it was reported that the Time-to-Failure (TTF) of electromigration (EM) in Cu/porous low-k interconnects deviated from the classical Black's Equation at 250-350 °C due to moisture invasion. The EM activation energy (E_a) was 1.003 eV at above 300 °C, whereas the apparent value reduced to be negative below 300 °C, being accompanied by significantly narrowed TTF distribution. The corresponding change in the failure mode was distinctly revealed, which indicated that the oxidation of Ta-based liner due to moisture invasion through the porous low-k contributed significantly and modestly to the EM failure below and above 300 °C. The mechanism of the liner oxidation was interpreted with the theory of field-assisted cation migration, which suggested the steep slowdown of the oxidation from 275 to 300 °C could be ascribed to the substantial decrease in the moisture concentration at the low-k/Ta oxide interface, most probably owing to significant suppression of adsorption and surface diffusion of chemisorbed moisture in the nanoporous low-k. The inconsistent EM behaviors at the lower and higher temperatures were thus interpreted by the competition of intrinsic and extrinsic EM controlled separately by Cu diffusion along the Cu/SiN-based cap layer interface and the moisture-damaged Cu/Ta interface.