Unipolar memristors enable 'stateful' logic operations via material implication

摘要

The realization of material implication (IMP) in a simple circuit combining two bipolar memristors with a conventional resistor was reported and published on Nature recently. The key to IMP is the memristors which are used as digital switches and perform "stateful" logic operations. Here we report that the IMP circuit composed of the unipolar memristors of Au/SrTiO_3/Pt devices, which have large switching ratio (over 1000) and linear I-V correlation in low-resistance states, enables logic operations. In the IMP circuit, a small modulation factor of 1.2 is obtained. These results indicate that the robustness of IMP operation is effectively increased.