Local electrical stress-induced doping and formation of monolayer graphene P-N junction

摘要

We demonstrated doping in monolayer graphene via local electrical stressing. The doping, confirmed by the resistance-voltage transfer characteristics of the graphene system, is observed to continuously tunable from N-type to P-type as the electrical stressing level (voltage) increases. Two major physical mechanisms are proposed to interpret the observed phenomena: modifications of surface chemistry for N-type doping (at low-level stressing) and thermally-activated charge transfer from graphene to SiO_2 substrate for P-type doping (at high-level stressing). The formation of P-N junction on two-dimensional graphene monolayer is demonstrated with complementary doping based on locally applied electrical stressing.