ELECTRICAL JUNCTION DEVICE WITH LIGHTLY DOPED BUFFER REGION TO PRECISELY LOCATE P-N JUNCTION

摘要

PURPOSE: To provide a semiconductor junction device, inhibiting the shift of a junction position to an n-type semiconductor region, which is not a p-type, from a highly p doped semiconductor region by means of diffusion. ;CONSTITUTION: A p doped semiconductor material 26 constituting the base of a hetero-junction bipolar transistor, an n doped semiconductor material 30 which constitutes an emitter and which is not a p-type and a boundary part between a p-type base 26 and an n-type emitter 28 are formed. Furthermore, a p-type doped semiconductor buffer 28, which has a p-type dopant density that is substantially lower than the p-type doped material and has sufficient thickness for forming an electric junction part in substantially the bounder between the p-type doped semiconductor material and the n doped semiconductor material 30 and a means for supplying an electric signal to the base 26 of the p doped material and the emitter 30 of the n doped material are provided.;COPYRIGHT: (C)1995,JPO