机译:具有InAIGaN势垒的InGaN基紫外发光二极管的效率下降的研究
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University,Hsinchu 300, Taiwan;
Institute of Electronics, National Chiao-Tung University, Hsinchu 300, Taiwan;
Department of Materials Science and Engineering, National Chung Hsing University,Taichung 402, Taiwan,Advanced Optoelectronic Technology Inc., Hsinchu 303, Taiwan;
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University,Hsinchu 300, Taiwan;
Institute of Electronics, National Chiao-Tung University, Hsinchu 300, Taiwan;
Department of Electro-Physics, National Chiao-Tung University, Hsinchu 300, Taiwan;
Department of Materials Science and Engineering, National Chung Hsing University,Taichung 402, Taiwan;
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University,Hsinchu 300, Taiwan;
Institute of Photonic System, College of Photonics, National Chiao-Tung University, Tainan 711, Taiwan;
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University,Hsinchu 300, Taiwan;
Advanced Optoelectronic Technology Inc., Hsinchu 303, Taiwan;
机译:通过阻挡层中的Mg掺杂降低InGaN基绿色发光二极管的效率下降和极化场的修改
机译:光提取效率对InGaN基发光二极管效率下降的影响
机译:基于InGaN的蓝色发光二极管和基于AIGalnP的红色发光二极管的电流和温度相关的效率下降
机译:利用InAlGaN势垒降低基于InGaN的UV发光二极管的效率下降
机译:研究和优化GaN基发光二极管中的载流子传输,载流子分布和效率下降
机译:理解基于InGaN的发光二极管效率下降的实验方法综述
机译:减小有效有效区域体积对incAn基发光二极管波长依赖性效率下降的影响