Department of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu 300, Taiwan;
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu 300, Taiwan;
Institute of Electronics, National Chiao-Tung University, Hsinchu 300, Taiwan;
Department of Electro-Physics, National Chiao-Tung University, Hsinchu 300, Taiwan;
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu 300, Taiwan;
Institute of Electronics, National Chiao-Tung University, Hsinchu 300, Taiwan;
机译:具有InAIGaN势垒的InGaN基紫外发光二极管的效率下降的研究
机译:通过阻挡层中的Mg掺杂降低InGaN基绿色发光二极管的效率下降和极化场的修改
机译:通过GaN / InalGaN / GaN多屏障改进了基于IngaN的多量子孔发光二极管的光输出功率
机译:使用InAlGaN势垒降低基于InGaN的UV发光二极管的效率下降
机译:iii-v氮化物基发光二极管的峰值辐射效率和电子漂移引起的效率下降。
机译:理解基于InGaN的发光二极管效率下降的实验方法综述
机译:减小有效有效区域体积对incAn基发光二极管波长依赖性效率下降的影响