Reduction of efficiency droop in InGaN-based UV light-emitting diodes with InAlGaN barrier

机译：使用InAlGaN势垒降低基于InGaN的UV发光二极管的效率下降

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The UV LEDs with quaternary InAlGaN barrier exhibit higher radiative recombination rate and low efficiency droop at a high injection current because of the better band-offset ratio and the higher carrier mobility.

机译：具有更高的带隙比和更高的载流子迁移率，具有四元InAlGaN势垒的UV LED在更高的注入电流下具有更高的辐射复合率和更低的效率下降。

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《2011 16th OptoeElectronics and Communications Conference》|2011年|p.733-734|共2页
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Ching-Hsueh Chiu; Po-Min Tu; Chun-Yen Chang; Shih-Cheng Huang; Jet-Rung Chang; Hsiao-Wen Zan; Hao-Chung Kuo; Chih-Peng Hsu;
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1. Investigation of efficiency droop for InGaN-based UV light-emitting diodes with InAIGaN barrier [J] . Po-Min Tu, Chun-Yen Chang, Shih-Cheng Huang, Applied Physics Letters . 2011,第21期

机译：具有InAIGaN势垒的InGaN基紫外发光二极管的效率下降的研究
2. Reduction of Efficiency Droop and Modification of Polarization Fields of InGaN-Based Green Light-Emitting Diodes via Mg-Doping in the Barriers [J] . ZHANG Ning, LIU Zhe, SI Zhao, 中国物理快报：英文版 . 2013,第008期

机译：通过阻挡层中的Mg掺杂降低InGaN基绿色发光二极管的效率下降和极化场的修改
3. Improved light-output power of InGaN-based multiple-quantum-well light-emitting diodes by GaN/InAlGaN/GaN multi-barrier [J] . Kim Jongmin, Kang Bong Kyun, Lee Sung-Nam, SIAM journal on applied dynamical systems . 2017,第2期

机译：通过GaN / InalGaN / GaN多屏障改进了基于IngaN的多量子孔发光二极管的光输出功率
4. Reduction of efficiency droop in InGaN-Based UV Light-Emitting Diodes with InAlGaN Barrier [C] . Ching-Hsueh Chiu, Po-Min Tu, Jet-Rung Chang, Gallium nitride materials and devices VII . 2012

机译：利用InAlGaN势垒降低基于InGaN的UV发光二极管的效率下降
5. Peak radiative efficiency and electron-drift-induced efficiency droop in iii-v nitride-based light-emitting diodes. [D] . Lin, Guan-Bo. 2013

机译：iii-v氮化物基发光二极管的峰值辐射效率和电子漂移引起的效率下降。
6. A Review on Experimental Measurements for Understanding Efficiency Droop in InGaN-Based Light-Emitting Diodes [O] . Lai Wang, Jie Jin, Chenziyi Mi, 2017

机译：理解基于InGaN的发光二极管效率下降的实验方法综述
7. Effects of a Reduced Effective Active Region Volume on Wavelength-Dependent Efficiency Droop of InGaN-Based Light-Emitting Diodes [O] . Panpan Li, Yongbing Zhao, Xiaoyan Yi, 2018

机译：减小有效有效区域体积对incAn基发光二极管波长依赖性效率下降的影响

Reduction of efficiency droop in InGaN-based UV light-emitting diodes with InAlGaN barrier

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