机译:光提取效率对InGaN基发光二极管效率下降的影响
Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese,Academy of Sciences, Beijing 100083, China,Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong, China;
Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors,Chinese, Academy of Sciences, Beijing 100083, China;
Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese,Academy of Sciences, Beijing 100083, China;
Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese,Academy of Sciences, Beijing 100083, China;
Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese,Academy of Sciences, Beijing 100083, China;
Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese,Academy of Sciences, Beijing 100083, China;
Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese,Academy of Sciences, Beijing 100083, China;
Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese,Academy of Sciences, Beijing 100083, China;
Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese,Academy of Sciences, Beijing 100083, China;
Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese,Academy of Sciences, Beijing 100083, China;
机译:基于InGaN的蓝色发光二极管和基于AIGalnP的红色发光二极管的电流和温度相关的效率下降
机译:基于IngaN的蓝色和AIGALNP的红色发光二极管的电流和温度依赖性效率级数
机译:通过光致发光和电致发光在基于IngaN的黄色和绿色发光二极管中解开效率下垂
机译:氮化铟镓基发光二极管中辐射复合速率对效率下降的重要性
机译:iii-v氮化物基发光二极管的峰值辐射效率和电子漂移引起的效率下降。
机译:理解基于InGaN的发光二极管效率下降的实验方法综述
机译:减小有效有效区域体积对incAn基发光二极管波长依赖性效率下降的影响