Strong luminescence of two-dimensional electron gas in tensile-stressed AIGaN/GaN heterostructures grown on Si substrates

摘要

We have investigated the photoluminescence (PL) characteristics of AIGaN/GaN heterostructure with an extremely high two-dimensional electron gas (2DEG) density. A very high 2DEG density was obtained by controlling the tensile stress during the growth of the heterostructure on silicon substrate. Strong PL emission peaks corresponding to both the band edge and the 2DEG were observed in the highly tensile-stressed heterostructure. Furthermore, the strong longitudinal optical (LO) phonon replicas (1-LO_(2DEG) and 2-LO_(2DEG)) of the 2DEG peak were also observed in the heterostructure.