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Fermi level pinning by integer charge transfer at electrode-organic semiconductor interfaces

机译:通过电极-有机半导体界面上的整数电荷转移进行费米能级固定

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摘要

The atomic structure of interfaces between conducting electrodes and molecular organic materials varies considerably. Yet experiments show that pinning of the Fermi level, which is observed at such interfaces, does not depend upon the structural details. In this letter, we develop a general model to explain Fermi level pinning, and formulate simple expressions for the pinning levels, based upon integer charge transfer between the conductor and the molecular layer. In particular, we show that DFT calculations give good values for the pinning levels.
机译:导电电极和分子有机材料之间的界面的原子结构变化很大。然而实验表明,在这样的界面上观察到的费米能级的钉扎并不取决于结构细节。在这封信中,我们建立了一个通用模型来解释费米能级钉扎,并基于导体和分子层之间的整数电荷转移,为钉扎能级制定了简单的表达式。特别是,我们表明DFT计算可为固定水平提供良好的值。

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  • 来源
    《Applied Physics Letters》 |2011年第11期|p.113303.1-113303.3|共3页
  • 作者单位

    Computational Materials Science, Faculty of Science and Technology and MESA +Institute for Nanotechnology, University of Twente, P. O. Box 217, 7500 AE Enschede, The Netherlands;

    Computational Materials Science, Faculty of Science and Technology and MESA +Institute for Nanotechnology, University of Twente, P. O. Box 217, 7500 AE Enschede, The Netherlands;

    Computational Materials Science, Faculty of Science and Technology and MESA +Institute for Nanotechnology, University of Twente, P. O. Box 217, 7500 AE Enschede, The Netherlands;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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  • 入库时间 2022-08-18 03:17:50

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