Preparation of ferroelectric field effect transistor based on sustainable strongly correlated (Fe,Zn)-3O-4 oxide semiconductor and their electrical transport properties

摘要

We have constructed a field effect transistor structure composed of the sustainable oxide semiconductor (Fe,Zn)-3O-4 with high Curie temperature and ferroelectric Pb(Zr,Ti)O-3. Electric field control of (Fe-2.5Zn-0.5)O-4 channel resistance was achieved in the heterostructures though modulation of their carrier concentration. The results will lead to the significant development of sustainable oxide semiconductor spintronics devices working at room temperature.