Process for using and creating paper based on natural or synthetic cellulose fibres or combinations thereof as phisical support and storing medium for electrical charges in self-sustaining junction field-effect transistors with memory using active semiconductor oxides

摘要

The present invention relates to a method for producing a drain and source which allows interconnection of a fiber, as well as a gate electrode contact present on the other side of the paper, in particular a P or N type of single or mixed form, A storage or storage medium for storing electrical charge in a self-discrete discrete or complementary field effect transistor using an organic or inorganic active semiconductor for channel region deposition deposited on the surface of the substrate, and a natural cellulose fiber, Based materials.