首页> 外文期刊>Dyes and Pigments >Arylacetylene end capped naphthodithiophene diimide (NDTI)-based semiconductors for air-stable, solution-processed n-channel organic field-effect transistors: Effect of terminal aryl groups on charge transport
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Arylacetylene end capped naphthodithiophene diimide (NDTI)-based semiconductors for air-stable, solution-processed n-channel organic field-effect transistors: Effect of terminal aryl groups on charge transport

机译:芳基乙炔末端盖上萘二甲基二酰亚胺(NDTI)基于空气稳定,加工的N沟道有机场效应晶体管的基于半导体:末端芳基对电荷运输的影响

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Solution-processable n-channel organic field-effect transistors (OFETs) are crucial for realizing low-cost, large-area, and all organic logic/complementary circuits. Herein, we present the synthesis, characterization and OFET characteristics of a series of arylacetylene end capped NDTI-based n-channel small molecule semiconductors with four different arylacetylene groups, i.e., thiophenylethynyl (TE, NDTI-BTE), phenylethynyl (PE, NDTI-BPE), 2-pyridinylethynyl (2PdE, NDTI-B2PdE), 4-pyridinylethynyl (4PdE, NDTI-B4PdE). All four NDTIs exhibit excellent solubility behavior in common organic solvents. Electrochemical and optical studies reveal that the introduction of the arylacetylene groups at the thiophene alpha-positions of NDTI endowed these molecules have sufficiently low-lying LUMO energy levels from -4.12 to- 4.24 eV, suitable for better air-stable electron transport. Under ambient atmosphere, we found that solution-processed bottom-gate top-contact (BGTC) transistors based on 120 degrees C-annealed thin-films of these NDTIs exhibit the best performance with the maximum electron mobilities of 0.049, 0.023, 0.011 and 0.033 cm(2)V(-1) s(-1) for NDTI-BTE, NDTI-BPE, NDTI-B2PdE and NDTI-B4PdE, respectively, due to better thin film microstructures. AFM measurements reveal that the spin coated films of these materials exhibited quite smooth and uniform morphology although these are small molecules forming crystalline structures. These results clearly demonstrate that arylacetylene groups are potential functional moieties for developing ambient-stable solution-processable small molecular electron-transporting materials for printable organic electronics.
机译:解决方案可处理的N沟道有机场效应晶体管(OFETS)对于实现低成本,大面积和所有有机逻辑/互补电路至关重要。在此,我们介绍了一系列芳基乙炔末端封端的基于NDTI的N沟道小分子半导体的合成,表征和OFET特性,具有四种不同的芳基乙炔基,即噻吩基乙炔基(TE,NDTI-BTE),苯基乙炔基(PE,NDTI- BPE),2-吡啶基乙炔基(2PDE,NDTI-B2PDE),4-吡啶基乙炔基(4PDE,NDTI-B4DE)。所有四个NDTIS在常见的有机溶剂中表现出优异的溶解度行为。电化学和光学研究表明,在NDTI的噻吩α-位置的引入赋予这些分子的噻吩α - 位置从-4.12〜4.24eV中具有足够低的Lumo能量水平,适用于更好的空气稳定的电子传输。在环境大气下,我们发现,基于120摄氏度的底栅顶部接触(BGTC)晶体管这些NDTIS的120摄氏度薄膜具有最佳性能,其最大电子迁移率为0.049,0.023,0.011和0.033由于较好的薄膜微结构,分别为NDTI-BTE,NDTI-BPE,NDTI-B2PDE和NDTI-B4DE的CM(2)V(-1)S(-1)。 AFM测量表明,这些材料的旋涂膜表现出相当光滑和均匀的形态,尽管这些是形成晶体结构的小分子。这些结果清楚地表明,芳基乙炔基是用于开发用于开发可印刷有机电子的环境稳定的溶液的小分子电子输送材料的潜在功能部分。

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