A comprehensive analytical model for threshold voltage calculation in GaN based metal-oxide-semiconductor high-electron-mobility transistors

摘要

An analytical model for threshold voltage calculation for metal-oxide-semiconductor GaN based high electron mobility transistors is proposed. This model includes polarization induced charges at each heterostructure interface/surface, surface donors, oxide/barrier interface traps charge, and interfacial and bulk fixed oxide charge. Applicability of the model is demonstrated on GaN/ AlGaN/GaN MOS heterostructure capacitors with Al_2O_3 and HfO_2 gate dielectrics grown by atomic layer deposition with different barrier surface treatment and Al_2O_3 thicknesse.