Molecular beam epitaxy of InAIN lattice-matched to GaN with homogeneous composition using ammonia as nitrogen source

摘要

InAIN lattice-matched to GaN was grown by molecular beam epitaxy (MBE) using ammonia as the nitrogen source. The alloy composition, growth conditions, and strain coherence of the InAIN were verified by high resolution x-ray diffraction ω-2θ scans and reciprocal space maps. Scanning transmission electron microscopy and energy-dispersive x-ray spectroscopy of the InAIN revealed the absence of lateral composition modulation that was observed in the films grown by plasma-assisted MBE. InAlN/AlN/GaN high electron mobility transistors with smooth surfaces were fabricated with electron mobilities exceeding 1600 cm~2/Vs and sheet resistances below 244 Ω/sq.