首页> 外文OA文献 >Growth of GaN by Gas-Source Molecular Beam Epitaxy by Ammonia and by Plasma Generated Nitrogen Radicals

【2h】

Growth of GaN by Gas-Source Molecular Beam Epitaxy by Ammonia and by Plasma Generated Nitrogen Radicals

机译：氨气源分子束外延生长和等离子体产生的氮自由基生长GaN

页面导航

著录项
引文网络
相似文献
相关主题

著录项

作者
W.S. Wong; N.Y. Li; H.K. Dong; F. Deng; S.S. Lau; C.W. Tu; J. Hays; S. Bidnyk; J.J. Song;
展开▼
作者单位

展开▼
年度 1996
总页数
原文格式 PDF
正文语种
中图分类

相似文献

外文文献
中文文献
专利

1. Growth of GaN and related materials by gas-source molecular-beam epitaxy using uncracked ammonia gas [J] . Seikoh Yoshida Journal of Crystal Growth . 2002,第期

机译：使用未裂解的氨气通过气源分子束外延生长GaN及其相关材料
2. Microstructural properties of GaN grown on a Si(110) substrate by gas-source molecular beam epitaxy: Dependence on the ammonia flux [J] . Lee Jong Hoon, Ryu Hyun, Ahn Sang Jung, Current applied physics: the official journal of the Korean Physical Society . 2015,第3期

机译：气源分子束外延在Si（110）衬底上生长的GaN的微结构性质：对氨通量的依赖
3. Control of ion content and nitrogen species using a mixed chemistry plasma for GaN grown at extremely high growth rates ＞9 μm/h by plasma-assisted molecular beam epitaxy [J] . Brendan P. Gunning, Evan A. Clinton, Joseph J. Merola, Journal of Applied Physics . 2015,第15期

机译：使用等离子体辅助分子束外延技术，以大于9μm/ h的极高生长速率，使用混合化学等离子体控制GaN的离子含量和氮物种
4. Growth of pseudomorphic heterostmctures and solid solutions in the AlN-SiC system by plasma-assisted, gas-source molecular beam epitaxy [C] . International conference on SiC and related materials . 1994

机译：通过等离子体辅助，气流源分子束外延对ALN-SIC系统的假形晶体和固体溶液的生长
5. Structure, morphology, and kinetics of GaN film growth using gas-source and RF plasma-assisted metal-organic molecular beam epitaxy [D] . Woll, Arthur Randall 2000

机译：使用气体源和RF等离子体辅助金属 - 有机分子束外延对GaN薄膜生长的结构，形态和动力学
6. Characterization and density control of GaN nanodots on Si (111) by droplet epitaxy using plasma-assisted molecular beam epitaxy [O] . Ing-Song Yu, Chun-Pu Chang, Chung-Pei Yang, 2014

机译：等离子体辅助分子束外延通过液滴外延对Si（111）上的GaN纳米点进行表征和密度控制
7. Growth kinetics and electronic properties of unintentionally doped semi-insulating GaN on SiC and high-resistivity GaN on sapphire grown by ammonia molecular-beam epitaxy [O] . Tang, H., Fang, Z.Q., Rolfe, S., 2010

机译：氨分子束外延生长无意掺杂的SiC半绝缘GaN和蓝宝石上的高电阻GaN的生长动力学和电子性质
8. Steady-State and Transient Photoconductivity in c-Axis GaN Nanowires Grown by Nitrogen-Plasma-Assisted Molecular Beam Epitaxy [R] . Sanford, N. A., Blanchard, P. T., Bertness, K. A., 2010

机译：氮等离子体辅助分子束外延生长的c轴GaN纳米线的稳态和瞬态光电导

Growth of GaN by Gas-Source Molecular Beam Epitaxy by Ammonia and by Plasma Generated Nitrogen Radicals

著录项

引文网络

相似文献

相关主题

期刊订阅