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One-dimensional pinning behavior in Co-doped BaFe_2As_2 thin films

机译:共掺杂BaFe_2As_2薄膜的一维钉扎行为

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摘要

Angle-resolved transport measurements revealed that planar defects dominate flux pinning in the investigated Co-doped BaFe_2As_2 thin film. For any given field and temperature, the critical current depends only on the angle between the crystallographic c-axis and the applied magnetic field but not on the angle between the current and the field. The critical current is therefore limited only by the in-plane component of the Lorentz force but independent of the out-of-plane component, which is entirely balanced by the pinning force exerted by the planar defects. This one-dimensional pinning behavior shows similarities and differences to intrinsic pinning in layered superconductors.
机译:角分辨输运测量表明,平面缺陷在研究的Co掺杂BaFe_2As_2薄膜中占主导地位。对于任何给定的场和温度,临界电流仅取决于晶体学c轴与所施加磁场之间的角度,而不取决于电流与场之间的角度。因此,临界电流仅受洛伦兹力的平面内分量限制,而不受平面外分量限制,平面外分量完全由平面缺陷施加的钉扎力平衡。这种一维钉扎行为显示了与分层超导体中固有钉扎的相似之处和不同之处。

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  • 来源
    《Applied Physics Letters》 |2013年第23期|232601.1-232601.4|共4页
  • 作者单位

    Atominstitut, Vienna University of Technology, Stadionallee 2,1020 Vienna, Austria;

    Atominstitut, Vienna University of Technology, Stadionallee 2,1020 Vienna, Austria;

    Atominstitut, Vienna University of Technology, Stadionallee 2,1020 Vienna, Austria;

    Institute for Metallic Materials, IFW Dresden, D-01171 Dresden, Germany;

    Institute for Metallic Materials, IFW Dresden, D-01171 Dresden, Germany;

    Institute for Metallic Materials, IFW Dresden, D-01171 Dresden, Germany;

    Institute for Metallic Materials, IFW Dresden, D-01171 Dresden, Germany;

    Institute for Metallic Materials, IFW Dresden, D-01171 Dresden, Germany;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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  • 入库时间 2022-08-18 03:16:46

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