ZnO-SiO_2 solar-blind photodetectors on flexible polyethersulfone substrate with organosilicon buffer layer

摘要

The ZnO-SiO_2 nanocomposite solar-blind metal-semiconductor-metal photodetectors (PDs) on flexible polyethersulfone (PES) with an organosilicon (SiO_x(CH_3)) buffer layer improved the -10 V-biased responsivity of PDs illuminated wavelength of 240 nm from 0.75 A/W (without SiO_x(CH_3) buffer layer) to 3.86 A/W and the deep-ultraviolet (DUV)-visible rejection ratio of PDs from 8.10 × 10~4 (without SiO_x(CH_3) buffer layer) to 1.75 × 10~5. Moreover, the inserted SiO_x(CH_3) buffer layer would reduce the responsivity and DUV-visible rejection ratio of degradation of the severely bended ZnO-SiO-2 nanocomposite PDs on PES.