ZnO-SiO2 solar-blind photodetectors on flexible polyethersulfone substrate with organosilicon buffer layer

摘要

The ZnO-SiO2 nanocomposite solar-blind metal-semiconductor-metal photodetectors (PDs) on flexible polyethersulfone (PES) with an organosilicon (SiOx(CH3)) buffer layer improved the -10?V-biased responsivity of PDs illuminated wavelength of 240?nm from 0.75?A/W (without SiOx(CH3) buffer layer) to 3.86?A/W and the deep-ultraviolet (DUV)–visible rejection ratio of PDs from 8.10?×?104 (without SiOx(CH3) buffer layer) to 1.75?×?105. Moreover, the inserted SiOx(CH3) buffer layer would reduce the responsivity and DUV-visible rejection ratio of degradation of the severely bended ZnO-SiO2 nanocomposite PDs on PES.