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Pyroelectric electron emission from nanometer-thick films of PbZr_xTi_(1-x)O_3

机译:PbZr_xTi_(1-x)O_3纳米厚膜的热释电子发射

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摘要

We report pyroelectric emission from PbZr_xTi_(1-x)O_3 (PZT) thin films on nanometer-sharp tips. The epitaxial PZT films are 30 nm thick and grown directly on single-crystal silicon tips. Pyroelectric emission occurs for heating rates of ≥50℃/min in a 20V/μm external field. The emission current is a maximum of 240 nA when the heating rate is 100℃/min and the electric field strength is ≥6.7 V/μm. The emitted charge is ~7% of that expected for a perfect thin film emitter of epitaxial PbZr_xTi_(1-x)O_3. We calculate that pyroelectric emission can occur without an applied field if the heating rate exceeds 4.0 × 10~7 ℃/min.
机译:我们报告了在纳米锐化尖端上PbZr_xTi_(1-x)O_3(PZT)薄膜的热释电发射。外延PZT膜厚30 nm,并直接在单晶硅尖端上生长。在20V /μm的外场中,加热速率≥50℃/ min时发生热释电。当加热速率为100℃/ min且电场强度≥6.7V /μm时,发射电流最大为240 nA。理想的外延PbZr_xTi_(1-x)O_3薄膜发射器的发射电荷约为预期的7%。我们计算出,如果加热速率超过4.0×10〜7℃/ min,则在没有施加电场的情况下会发生热电发射。

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  • 来源
    《Applied Physics Letters》 |2013年第19期|192908.1-192908.5|共5页
  • 作者单位

    Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA;

    Department of Materials Science and Engineering and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA;

    Department of Materials Science and Engineering and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA;

    Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA,Department of Materials Science and Engineering and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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  • 入库时间 2022-08-18 03:16:28

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