Influence of dislocation density on carrier injection in InGaN/GaN light-emitting diodes operated with alternating current

摘要

The frequency dependence of current spreading and light output power (LOP) was investigated for InGaN/GaN light-emitting diodes (LEDs) grown on n-GaN templates with different threading dislocation densities (TDDs) that were operated using alternating-current (AC). By comparison with LEDs with low TDDs, the LEDs with high TDDs showed a strong frequency dependence for both current spreading and LOP during high-frequency AC operation. The results were attributed to a weak carrier injection into InGaN quantum wells (QWs) during high frequency AC operation, which resulted from the suppression of carrier transport induced by the carrier scattering around negatively charged dislocation cores.