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Scotch tape induced strains for enhancing superconductivity of FeSe_(0.5)Te_(0.5) single crystals

机译:用透明胶带诱导的应变增强FeSe_(0.5)Te_(0.5)单晶的超导性

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摘要

We investigated the superconducting transition temperature T_c of FeSe_(0.5)Te_(0.5) single crystals, which can be enhanced up to 14% by attaching onto a commercial Scotch tape. The Scotch tape exhibits a large cooling shrinkage at low temperatures, which is considerably more pronounced than that of the metallic FeSe_(0.5)Te_(0.5) single crystal, thus providing a compressive strain of 2.4 × 10~(-3) at 15 K. For such strain, we calculated that the lattice parameter of c/a can be increased to ~0.31%, which corresponds to the enhancement of the superconductivity. The present finding provides a rapid and simple method to examine the microstructure sensitive physical properties of the layered-structure materials by using the Scotch tape as strain generator.
机译:我们研究了FeSe_(0.5)Te_(0.5)单晶的超导转变温度T_c,可以通过将其粘贴到商用透明胶带上将其提高至14%。透明胶带在低温下表现出较大的冷却收缩率,这比金属FeSe_(0.5)Te_(0.5)单晶的收缩率要明显得多,因此在15 K时的压缩应变为2.4×10〜(-3)对于这种应变,我们计算出c / a的晶格参数可以增加到〜0.31%,这与超导性的增强相对应。本发现提供了一种快速简单的方法,通过使用透明胶带作为应变发生器来检查层状结构材料的微观结构敏感物理特性。

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  • 来源
    《Applied Physics Letters》 |2014年第23期|232602.1-232602.4|共4页
  • 作者单位

    Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei,Anhui 230031, China;

    Research Institute of Superconductor Electronics, Nanjing University, Nanjing 210093, China,INPAC-Institute for Nanoscale Physics and Chemistry, KU Leuven, Celestijnenlaan 200 D, Leuven B-3001,Belgium;

    High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei, Anhui 230031, China;

    High Magnetic Field Laboratory, University of Science and Technology of China, Hefei, Anhui 230026,China;

    Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei,Anhui 230031, China;

    Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei,Anhui 230031, China;

    Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei,Anhui 230031, China;

    Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei,Anhui 230031, China;

    Research Institute of Superconductor Electronics, Nanjing University, Nanjing 210093, China;

    Research Institute of Superconductor Electronics, Nanjing University, Nanjing 210093, China;

    Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei,Anhui 230031, China,Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China;

    High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei, Anhui 230031, China,Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China;

    High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei, Anhui 230031, China,High Magnetic Field Laboratory, University of Science and Technology of China, Hefei, Anhui 230026,China,Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China;

    INPAC-Institute for Nanoscale Physics and Chemistry, KU Leuven, Celestijnenlaan 200 D, Leuven B-3001,Belgium;

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