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机译:用于InGaN / GaN发光二极管的空穴加速器
LUMINOUS! Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, School of Physical and Mathematical Sciences, Nanyang Technological University,50 Nanyang Avenue, Singapore 639798;
LUMINOUS! Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, School of Physical and Mathematical Sciences, Nanyang Technological University,50 Nanyang Avenue, Singapore 639798;
LUMINOUS! Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, School of Physical and Mathematical Sciences, Nanyang Technological University,50 Nanyang Avenue, Singapore 639798;
LUMINOUS! Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, School of Physical and Mathematical Sciences, Nanyang Technological University,50 Nanyang Avenue, Singapore 639798;
LUMINOUS! Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, School of Physical and Mathematical Sciences, Nanyang Technological University,50 Nanyang Avenue, Singapore 639798;
LUMINOUS! Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, School of Physical and Mathematical Sciences, Nanyang Technological University,50 Nanyang Avenue, Singapore 639798;
LUMINOUS! Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, School of Physical and Mathematical Sciences, Nanyang Technological University,50 Nanyang Avenue, Singapore 639798;
LUMINOUS! Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, School of Physical and Mathematical Sciences, Nanyang Technological University,50 Nanyang Avenue, Singapore 639798;
LUMINOUS! Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, School of Physical and Mathematical Sciences, Nanyang Technological University,50 Nanyang Avenue, Singapore 639798;
LUMINOUS! Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, School of Physical and Mathematical Sciences, Nanyang Technological University,50 Nanyang Avenue, Singapore 639798;
LUMINOUS! Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, School of Physical and Mathematical Sciences, Nanyang Technological University,50 Nanyang Avenue, Singapore 639798;
LUMINOUS! Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, School of Physical and Mathematical Sciences, Nanyang Technological University,50 Nanyang Avenue, Singapore 639798,Department of Electrical and Electronics, Department of Physics, and UNAM-Institute of Material Science and Nanotechnology, Bilkent University, TR-06800 Ankara, Turkey;
机译:用于InGaN / GaN发光二极管的空穴加速器
机译:通过插入n〜+ -InGaN电子注入层和p-InGaN / GaN空穴注入层来改善InGaN / GaN MQWs发光二极管的静电放电特性
机译:GaN-Ingan-GaN屏障的起源在增强InGaN / GaN绿色发光二极管的空穴注射中
机译:具有微孔排列的铟锡氧化物层的InGaN / GaN发光二极管的光电性能性能增强
机译:以极性,半极性和非极性方向生长的InGaN / GaN多量子阱发光二极管。
机译:聚苯乙烯纳米光学光刻法制备的光子晶体结构P-GAN纳米棒的研究提高了INGAN / GAN绿色发光二极管光提取效率
机译:用于InGaN / GaN发光二极管的空穴加速器