机译:量子阱生长温度对在绿色和蓝色光谱区域发射的InGaN / GaN多量子阱的复合效率的影响
School of Physics and Astronomy, Photon Science Institute, University of Manchester, Manchester M13 9PL, United Kingdom;
Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom;
Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom;
Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom;
School of Physics and Astronomy, Photon Science Institute, University of Manchester, Manchester M13 9PL, United Kingdom;
Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom;
Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom;
机译:通过预流提高InGaN阱生长的绿色发射InGaN / GaN多量子阱的内部量子效率
机译:InGaN / GaN多量子阱绿色发光二极管中的Shockley-Read-Hall重组和效率下降
机译:用于降低蓝绿色区域中量子受限斯塔克效应的不对称Gan / inn / ingan / gan量子阱发光二极管的制备
机译:绿,蓝和紫外InGaN / GaN多量子阱发光二极管的低温工作
机译:以极性,半极性和非极性方向生长的InGaN / GaN多量子阱发光二极管。
机译:等温GaN覆盖层对硅衬底上绿色发光二极管的InGaN / GaN多量子阱的影响
机译:量子阱生长温度对在绿色和蓝色光谱区域发射的InGaN / GaN多量子阱的复合效率的影响