Improved Internal Quantum Efficiency of Green Emitting InGaN/GaN Multiple Quantum Wells by In Preflow for InGaN Well Growth

Muthusamy Senthil Kumar; Jae Young Park; Yong Seok Lee; Sang Jo Chung; Chang-Hee Hong; Eun-Kyung Suh

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Improved Internal Quantum Efficiency of Green Emitting InGaN/GaN Multiple Quantum Wells by In Preflow for InGaN Well Growth

机译：通过预流提高InGaN阱生长的绿色发射InGaN / GaN多量子阱的内部量子效率

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A series of green emitting In_(1-x)Ga_xN/GaN multi-quantum wells (MQWs) has been grown by using low pressure metal organic chemical vapor deposition. Effects of In flow prior to InGaN well growth for a short duration on structural and optical properties o

机译：通过使用低压金属有机化学气相沉积法，已生长出一系列绿色发射In_（1-x）Ga_xN / GaN多量子阱（MQW）。 InGaN阱生长短时间内In流动对结构和光学性能的影响

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来源
《Japanese journal of applied physics》 |2008年第2issue1期|839-842|共4页
作者
Muthusamy Senthil Kumar; Jae Young Park; Yong Seok Lee; Sang Jo Chung; Chang-Hee Hong; Eun-Kyung Suh;
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正文语种 eng
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关键词
MOCVD; InGaN/GaN MQWs; surface pit; photoluminescence; internal quantum efficiency;

机译：MOCVD;InGaN / GaN MQW;表面凹坑光致发光内部量子效率;

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专利

1. Improving the internal quantum efficiency of green InGaN quantum dots through coupled InGaN/GaN quantum well and quantum dot structure [J] . Jiadong Yu, Lai Wang, Di Yang, Applied physics express . 2015,第9期

机译：通过耦合的InGaN / GaN量子阱和量子点结构提高绿色InGaN量子点的内部量子效率
2. Internal quantum efficiency improvement of InGaN/GaN multiple quantum well green light-emitting diodes [J] . Zhou Q., Xu M., Wang H. Opto-electronics review . 2016,第1期

机译：InGaN / GaN多量子阱绿色发光二极管的内部量子效率提高
3. Effects of quantum well growth temperature on the recombination efficiency of InGaN/GaN multiple quantum wells that emit in the green and blue spectral regions [J] . S. Hammersley, M. J. Kappers, F. C.-P. Massabuau, Applied Physics Letters . 2015,第13期

机译：量子阱生长温度对在绿色和蓝色光谱区域发射的InGaN / GaN多量子阱的复合效率的影响
4. Green light emitting diodes with high internal quantum efficiency InGaN/GaN self-organized quantum dots grown by RF-Plasma Assisted Molecular Beam Epitaxy [C] . Zhang, Meng, Guo, Wei, Banerjee, Animesh, CLEO;Conference on Lasers and Electro-Optics;Quantum Electronics and Laser Science Conference;QELS . 2010

机译：内部高量子效率的绿色发光二极管通过射频等离子体辅助分子束外延生长的InGaN / GaN自组织量子点
5. InGaN/GaN Multiple Quantum Well Light-Emitting Diodes grown on Polar, Semi-polar and Non-Polar Orientations. [D] . Mukund, Aadhithya Hosalli. 2014

机译：以极性，半极性和非极性方向生长的InGaN / GaN多量子阱发光二极管。
6. Quantum Efficiency Enhancement of a GaN-Based Green Light-Emitting Diode by a Graded Indium Composition p-Type InGaN Layer [O] . Quanbin Zhou, Hong Wang, Mingsheng Xu, 2018

机译：梯度铟成分p型InGaN层增强GaN基绿色发光二极管的量子效率
7. Internal quantum efficiency improvement of InGaN/GaN multiple quantum well green light-emitting diodes [O] . Q. Zhou, M. Xu, H. Wang 2016

机译：IngaN / GaN多量子孔绿发光二极管内部量子效率改进

Improved Internal Quantum Efficiency of Green Emitting InGaN/GaN Multiple Quantum Wells by In Preflow for InGaN Well Growth

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