Negative differential resistance in n-type noncompensated silicon at low temperature

摘要

We present the results on low temperature current-voltage characteristics of noncompensated Si doped by Sb. In the temperature range 1.9-2.25 K and at electrical fields smaller than 1 V/cm, the negative differential resistance (NDR) was observed. The external magnetic field enhances the region of the NDR. We attribute this effect to the delocalization of the D~- states in the upper Hubbard band due to the accumulation of the charge injected by current.