Using laser to modulate a linear resistance change in Cu_2O/Si heteroepitaxial junction

摘要

A large laser modulated resistance effect was observed in a Cu_2O heterojunction of Cu_2O/Si. Compared to the no laser illumination condition, the lateral resistance of the Cu_2O film was greatly altered. More interestingly, through the spatial movement of a laser spot between two electrodes, a tunable resistance with good linearity was achieved. We attribute this surface resistance effect to the difference in carrier mobility and carrier density between the Cu_2O and Si sides. The strong linear resistance change ratio of Cu_2O/Si indicates that this simple PN heteroepitaxial junction structure is a potential candidate for laser-controlled resistors, sensors, and even storage devices.