The physical mechanism on the threshold voltage temperature stability improvement for GaN HEMTs with pre-fluorination argon treatment

摘要

In this paper, a normally-off AlGaN/GaN MIS-HEMT with improved threshold voltage (V_(TH)) thermal stability is reported with investigations on its physical mechanism. The normally-off operation of the device is achieved from novel short argon plasma treatment (AFT) prior to the fluorine plasma treatment (FPT) on Al_2O_3 gate dielectrics. For the MIS-HEMT with FPT only, its V_(TH) drops from 4.2 V at room temperature to 0.5 V at 200 ℃. Alternatively, for the device with APT-then-FPT process, its V_(TH) can retain at 2.5 V at 200 ℃ due to the increased amount of deep-level traps that do not emit electrons at 200 ℃. This thermally stable V_(TH) makes this device suitable for high power applications. The depth profile of the F atoms in Al_2O_3, measured by the secondary ion mass spectroscopy, reveals a significant increase in the F concentration when APT is conducted prior to FPT. The X-ray photoelectron spectroscopy (XPS) analysis on the plasma-treated Al_2O_3 surfaces observes higher composition of Al-F bonds if APT was applied before FPT. The enhanced breaking of Al-O bonds due to Ar bombardment assisted in the increased incorporation of F radicals at the surface during the subsequent FPT process. The Schrodinger equation of Al_2O_xF_y cells, with the same Al-F compositions as obtained from XPS, was solved by Gaussian 09 molecular simulations to extract electron state distribution as a function of energy. The simulation results show creation of the deeper trap states in the Al_2O_3 bandgap when APT is used before FPT. Finally, the trap distribution extracted from the simulations is verified by the gate-stress experimental characterization to confirm the physical mechanism described.