机译:陷阱态钝化通过在高k /金属栅极的纳米级n-金属氧化物半导体场效应晶体管中的氧化ha中掺杂锆来改善热载流子的不稳定性。
Department of Physics, National Sun Yat-sen University, 70 Lien-hai Road, Kaohsiung 80424, Taiwan;
Department of Physics, National Sun Yat-sen University, 70 Lien-hai Road, Kaohsiung 80424, Taiwan,Advanced Optoelectronics Technology Center, National Cheng Rung University, Tainan 701, Taiwan;
Department of Physics, National Sun Yat-sen University, 70 Lien-hai Road, Kaohsiung 80424, Taiwan;
Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan;
Department of Physics, National Sun Yat-sen University, 70 Lien-hai Road, Kaohsiung 80424, Taiwan;
Department of Physics, National Sun Yat-sen University, 70 Lien-hai Road, Kaohsiung 80424, Taiwan;
Department of Photonics, National Sun Yat-Sen University, 70 Lien-hai Road, Kaohsiung 80424, Taiwan;
Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan;
Device Department, United Microelectronics Corporation, Tainan Science Park, Tainan 701, Taiwan;
Device Department, United Microelectronics Corporation, Tainan Science Park, Tainan 701, Taiwan;
Device Department, United Microelectronics Corporation, Tainan Science Park, Tainan 701, Taiwan;
机译:互补多脉冲技术在高k /金属栅n型金属氧化物半导体场效应晶体管上捕获正偏压温度不稳定性的特性的观察
机译:La_2O_3盖层厚度对高K /金属栅叠层n沟道金属氧化物半导体场效应晶体管热载流子降解的影响
机译:纳米级金属氧化物半导体场效应晶体管中热载流子注入界面陷阱的产生过程
机译:使用自旋相关复合的金属栅极氧化Ha场效应晶体管中的负偏置应力界面陷阱中心
机译:使用叔丁醇ha(IV)通过CVD和PECVD沉积的固态晶体管栅极应用的based基高k薄膜的特性表征。
机译:使用氧化锆纳米线作为高k栅极电介质的高性能顶门石墨烯纳米晶体管
机译:通过信道热载波效应在金属氧化物半导体场效应晶体管中的沟通捕获/发射时间常数的改变