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机译:互补多脉冲技术在高k /金属栅n型金属氧化物半导体场效应晶体管上捕获正偏压温度不稳定性的特性的观察
VLSI Technology Laboratory, Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan, 701, Taiwan;
VLSI Technology Laboratory, Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan, 701, Taiwan;
Taiwan semiconductor manufacturing company, 8 Li-Hsin Rd 6, Hsinchu Science Park, Hsinchu, 300, Taiwan;
Taiwan semiconductor manufacturing company, 8 Li-Hsin Rd 6, Hsinchu Science Park, Hsinchu, 300, Taiwan;
Taiwan semiconductor manufacturing company, 8 Li-Hsin Rd 6, Hsinchu Science Park, Hsinchu, 300, Taiwan;
Taiwan semiconductor manufacturing company, 8 Li-Hsin Rd 6, Hsinchu Science Park, Hsinchu, 300, Taiwan;
Taiwan semiconductor manufacturing company, 8 Li-Hsin Rd 6, Hsinchu Science Park, Hsinchu, 300, Taiwan;
Taiwan semiconductor manufacturing company, 8 Li-Hsin Rd 6, Hsinchu Science Park, Hsinchu, 300, Taiwan;
Taiwan semiconductor manufacturing company, 8 Li-Hsin Rd 6, Hsinchu Science Park, Hsinchu, 300, Taiwan;
Taiwan semiconductor manufacturing company, 8 Li-Hsin Rd 6, Hsinchu Science Park, Hsinchu, 300, Taiwan;
positive bias temperature stability; pulse measurement; detrapping; high-k dielectrics; metal gate;
机译:偏置温度不稳定性对具有高k / SiO_2栅堆叠的互补金属氧化物半导体场效应晶体管的应变效应和沟道长度依赖性
机译:高k介电栅极氧化物的结晶对n沟道金属氧化物半导体场发射晶体管的正偏置温度不稳定性的影响
机译:活化退火温度对高k /金属栅叠层p型金属氧化物半导体场效应晶体管的性能,负偏置温度不稳定性和介电击穿寿命的影响
机译:I
机译:在二氧化f和基于二氧化硅的金属氧化物-硅结构中,与偏置温度不稳定性和应力引起的泄漏电流有关的缺陷的磁共振观察。
机译:用于金属氧化物半导体电容器和场效应晶体管的氢化金刚石上高k氧化物概述
机译:具有超薄等离子体 - 氮化SiON电介质的P沟道金属氧化物半导体场效应晶体管负偏置温度不稳定性下的界面阱和氧化物电荷产生