机译:反向InAs / GaSb双层中载流子的有效g因子
International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China,Collaborative Innovation Center of Quantum Matter, Beijing 100871, China;
Teledyne Scientific and Imaging, Thousand Oaks, California 91630, USA;
International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China,Collaborative Innovation Center of Quantum Matter, Beijing 100871, China,Department of Physics and Astronomy, Rice University, Houston, Texas 77251-1892, USA;
机译:在INAS / GASB和GASB / INAS核心壳纳米线中的带倒置间隙
机译:InAs / GaSb量子阱中回旋加速器质量和混合的电子-空穴态的g因子
机译:倒带三层InAs / GaSb / InAs量子阱的温度相关太赫兹光谱
机译:电子有效质量变化对InAs / GaSb电子孔双层隧穿场效应晶体管性能的影响
机译:InAs / GaSb和基于InAs / InAsSb II型超晶格的红外器件的暗电流抑制,光学性能改进和高频操作
机译:InAs / GaSb和GaSb / InAs核-壳纳米线的能带反转间隙
机译:反向InAs / GaSb双层中载流子的有效g-因子