Effectiveﾠg-factors of carriers in inverted InAs/GaSb bilayers

摘要

We perform tilt-fieldﾠtransportﾠexperiment on inverted InAs/GaSb, which hosts quantum spin Hallﾠinsulator.ﾠBy means of coincidence method,ﾠLandau levelﾠ(LL) spectra of electron and hole carriers are systematically studied at different carrier densities tuned by gate voltages. When Fermi level stays in theﾠconduction band,ﾠwe observe LL crossing and anti-crossing behaviors at odd and even filling factors, respectively, with a correspondingﾠg-factor of 11.5. It remains nearly constant for varying filling factors and electron densities. On the contrary, forﾠGaSbﾠholes, only a smallﾠZeeman splittingﾠis observed even at large tilt angles, indicating aﾠg-factor of less than 3.