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机译:GaN中基于缺陷准费米能级控制的C_N降低:少数载流子作用的证据
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC, United States,Adroit Materials Inc., 2054 Kildaire Farm Rd., Cary, NC, United States;
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC, United States;
Adroit Materials Inc., 2054 Kildaire Farm Rd., Cary, NC, United States;
Adroit Materials Inc., 2054 Kildaire Farm Rd., Cary, NC, United States;
Adroit Materials Inc., 2054 Kildaire Farm Rd., Cary, NC, United States;
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC, United States;
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC, United States,Adroit Materials Inc., 2054 Kildaire Farm Rd., Cary, NC, United States;
机译:少数载流子注入下SiC的准费米能级和故障回路的扩展
机译:通过缺陷准费米能级控制减少宽带隙半导体中的点缺陷
机译:缺陷准费米能级控制掺杂镁的GaN的钝化和补偿
机译:高偏压下平衡态量子阱聚光太阳能电池的热载子效应的准费米能级分裂和证据
机译:垂直GaN P-N二极管中的缺陷介导的载波传输机制
机译:具有1.1的溶液处理BiI3膜eV准费米能级分裂:水温度和水的作用处理期间的溶剂
机译:GaN中表面缺陷分布与少数载流子传输特性之间的相关性
机译:高载流子迁移率InGaas化合物半导体和GaN的高电介质 - 生长,界面结构研究和表面费米能级解旋