High Dielectrics on High Carrier Mobility InGaAs Compound Semiconductors and GaN - Growth, Interfacial Structural Studies, and Surface Fermi Level Unpinning

摘要

This is a project on nano-electronics, which achieved many firsts: full Fermi level unpinning in oxide-In0.2Ga0.8As, determined energy-band parameters at interfaces of high-k; atomic-layer-deposited (ALD) oxides on GaAs and InGaAs, and first to achieve inversion-channel GaN on MOSFET with ALD Al2O3 as gate dielectric.