机译:界面空隙对ZnO微盘/ p -GaN异质结发光二极管电致发光颜色的影响
Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul, South Korea;
Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul, South Korea;
Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul, South Korea;
Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul, South Korea;
Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, South Korea;
School of Physics and Astronomy, University of Manchester, Manchester, United Kingdom;
UNIST Central Research Facilities, UNIST, Ulsan, South Korea;
Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul, South Korea;
机译:n-ZnO薄膜/ ZnO纳米线阵列/ p-GaN薄膜异质结发光二极管中ZnO纳米线的电致发光
机译:n-ZnO / p-GaN和n-MgZnO / p-GaN异质结发光二极管中紫外线电致发光的起源
机译:用白光电致发光制备N-ZnO /(I-ZnO)/ P-GaN异质结发光二极管的容易接近方法
机译:p-GaN / MgO / n-ZnO异质结发光二极管的电致发光
机译:GaN基发光二极管和垂直腔表面发射激光器的量子效率增强。
机译:退火的ZnO / GaN异质结发光二极管的电致发光起源
机译:退火ZnO / GaN异质结发光二极管的电致发光原点