Brief description of embodiments of a diode emitting in the ultraviolet a base of heterojunction of n - zno / p - gan: mg on a substrate made of al2o3 c -

摘要

The diode has a p-type gallium nitride and magnesium (GaN:Mg) crystallized semiconductor layer (1) deposited directly on a c-aluminum oxide type substrate (2) by a metal-organic chemical vapor deposition method. An intrinsically doped zinc oxide layer (3) is deposited on the semiconductor layer (1) by laser ablation. Electrodes composed of nickel/gold layer and titanium/gold layer are deposited on the layers (1, 3). An independent claim is also included for a method for fabricating an ultraviolet light emitting diode.