Photoconductivity of InN grown by MOVPE: Low temperature and weak light illumination

摘要

Using a light-emitting diode instead of a laser, we study the photoconductivity (PC) in the metalor-ganic vapor phase epitaxy grown InN films under 2.3 K-280 K temperature with blocked 300 K blackbody radiation. Although InN's negative PC was observed, it shows a quick response, not a "persistent" one as previously described by PC measurements using laser. An artificial "persistent negative PC" has been experimentally demonstrated by the light heating effect (LHE). The quick response negative PC is weakened by increased temperature and is less dependent on the light intensity. Further analyses show that the so-called "persistent photoconductivity" in InN might be justified as LHE.