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METHOD OF FORMING A LOW TEMPERATURE-GROWN BUFFER LAYER, LIGHT EMITTING ELEMENT, METHOD OF MAKING SAME, AND LIGHT EMITTING DEVICE
METHOD OF FORMING A LOW TEMPERATURE-GROWN BUFFER LAYER, LIGHT EMITTING ELEMENT, METHOD OF MAKING SAME, AND LIGHT EMITTING DEVICE
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机译:形成低温生长缓冲层的方法,发光元件,相同的制造方法以及发光装置
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摘要
A method of forming a low temperature-grown buffer layer having the steps of: placing a Ga2O3 substrate in a MOCVD apparatus; providing a H2 atmosphere in the MOCVD apparatus and setting a buffer layer growth condition having an atmosphere temperature of 350° C. to 550° C.; and supplying a source gas having two or more of TMG, TMA and NH3 onto the Ga2O3 substrate in the buffer layer growth condition to form the low temperature-grown buffer layer on the Ga2O3 substrate.
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机译:一种形成低温生长的缓冲层的方法,其具有以下步骤:将Ga 2 O 3衬底放置在MOCVD装置中;以及将Ga 2 O 3衬底放置在MOCVD装置中。在MOCVD装置中提供H 2气氛,并设置气氛温度为350℃至550℃的缓冲层生长条件;在缓冲层生长条件下,将具有TMG,TMA和NH3中的两种或更多种的源气体供应到Ga2O3衬底上,以在Ga2O3衬底上形成低温生长的缓冲层。
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