Effect of buffer iron doping on delta-doped β-Ga_2O_3 metal semiconductor field effect transistors

摘要

We report on the effect of iron (Fe)-doped semi-insulating buffers on the electron transport and DC-RF dispersion in Si delta (delta)-doped beta-Ga2O3 metal-semiconductor field effect transistors. The effect of the distance between the 2-dimensional electron gas and the Fe-doped region was investigated, and Fe doping in the buffer was found to have a significant effect on the transport properties. It was found that buffers thicker than 600 nm can enable better transport and dispersion properties for field effect transistors, while maintaining relatively low parasitic buffer leakage. This work can provide guidance for the use of Fe-doped insulating buffers for future Ga2O3 based electronics. Published by AIP Publishing.