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Transfer and patterning of chemical vapor deposited graphene by a multifunctional polymer film

机译:多功能聚合物薄膜对化学气相沉积石墨烯的转移和构图

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摘要

Graphene is seeking pathways towards applications, but there are still plenty of unresolved problems on the way. Many of those obstacles are related to synthesis and processing of graphene. Chemical vapor deposition (CVD) of graphene is currently one of the most promising techniques that enable scalable synthesis of high quality graphene on a copper substrate. From the transient metal substrate, the CVD graphene film is transferred to the desired dielectric substrate. Most often, the transfer process is done by using a supporting poly(methyl methacrylate) (PMMA) film, which is also a widely used electron beam resist. Conventionally, after graphene is transferred to the substrate, the supporting PMMA film is removed by organic solvents. Hence, the potential of using the same PMMA layer as a resist mask remains unexplored. Since PMMA is an electron beam resist, the same polymer film can be useful both for transferring and for patterning of graphene. In this work, we demonstrate simultaneous transfer and patterning of graphene by using the same PMMA film. With our demonstrated method, we are able to receive sub-micron resolution very easily. The graphene transfer and its subsequent patterning with the same resist layer may help developing device applications based on graphene and other 2D materials in the near future. Published by AIP Publishing.
机译:石墨烯正在寻找通往应用的途径,但途中仍存在许多未解决的问题。这些障碍中的许多与石墨烯的合成和加工有关。石墨烯的化学气相沉积(CVD)是目前最有前途的技术之一,能够在铜基板上进行可扩展的高质量石墨烯合成。 CVD石墨烯膜从过渡金属衬底转移到所需的介电衬底。最常见的是,转移过程是通过使用聚甲基丙烯酸甲酯(PMMA)支撑膜完成的,该膜也是一种广泛使用的电子束抗蚀剂。常规地,在将石墨烯转移到衬底上之后,通过有机溶剂去除支撑的PMMA膜。因此,仍未探索使用相同的PMMA层作为抗蚀剂掩模的潜力。由于PMMA是电子束抗蚀剂,因此相同的聚合物膜可用于石墨烯的转移和构图。在这项工作中,我们演示了使用相同的PMMA膜同时进行石墨烯的转移和构图。利用我们演示的方法,我们可以非常轻松地获得亚微米分辨率。石墨烯转移及其后续使用相同抗蚀剂层的图案化可在不久的将来帮助开发基于石墨烯和其他2D材料的设备应用。由AIP Publishing发布。

著录项

  • 来源
    《Applied Physics Letters》 |2018年第7期|073107.1-073107.5|共5页
  • 作者单位

    Univ Eastern Finland, Inst Photon, POB 111, FI-80101 Joensuu, Finland;

    Univ Eastern Finland, Inst Photon, POB 111, FI-80101 Joensuu, Finland;

    Aalto Univ, Dept Elect & Nanoengn, FI-00076 Aalto, Finland;

    Univ Eastern Finland, Inst Photon, POB 111, FI-80101 Joensuu, Finland;

    Aalto Univ, Dept Elect & Nanoengn, FI-00076 Aalto, Finland;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

  • 入库时间 2022-08-18 03:13:47

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