Flexible short-channel organic transistors and inverter circuits using top-contact and double-gate structure

摘要

We demonstrate threshold voltage controllable short-channel transistors and organic inverter circuits with top-contact electrodes on flexible substrates. The source and drain electrodes were thermally evaporated on semiconductor material and patterned using photolithography and a wet etching process. The mobility of the fabricated transistors with channel lengths (L-CH) of 3 mu m was 0.495 0.037 cm(2) V-1 s(-1), which is 91% of that of a long-channel transistor with L-CH of 50 mu m. Finally, switching voltage (V-SW) controllable organic inverter circuits are demonstrated with a wide-range tunability of over 1.91 V at a supply voltage (V-DD) of 3 V and a gain over 75.8 (V/V).